CY62137FV18

CY62137FV18 MoBL® 2-Mbit (128K x 16) Static RAM www.DataSheet4U.com Features ■ ■ ■ ■ Very high speed: 55 ns Wide voltage range: 1.65 V – 2.25 V Pin compatible with CY62137CV18 Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 5 A Ultra low active power ❐ Typical active current: 1.6 mA @ f = 1 MHz Ultra low standby power Easy memory expansion with CE and OE features Automatic power down when deselected Complementary metal oxide semiconductor (CMOS) for optimum speed and power Byte power-down feature Available in a Pb-free 48-Ball Very fine ball grid package (VFBGA) package ■ is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), both the Byte High Enable and the Byte Low Enable are disabled (BHE, BLE HIGH), or during an active write operation (CE LOW and WE LOW). To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7) is written into the location specified on the address pi...