CY62138EV30

2 Mbit (256K x 8) MoBL Static RAM Features ■ CY62138EV30 MoBL®  www.DataSheet4U.com Functional Description The CY62138EV30[1] is a high performance CMOS static RAM organized as 256K words by eight bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. The device can be put into standby mode reducing power consumption when deselected (CE HIGH). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW and WE LOW). Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V Pin compatible with CY62138CV30 Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A Ultra low active power ❐ Typical activ...