2N3955 MONOLITHIC DUAL N-CHANNEL JFET
The 2N3955 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
The 2N3955 f...
2N3955 MONOLITHIC DUAL N-CHANNEL JFET
The 2N3955 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
The 2N3955 family are matched JFET pairs for differential amplifiers. The 2N3955 family of general purpose JFETs is characterized for low and medium frequency differential amplifiers requiring low offset voltage, drift, noise and capacitance The 2N3955 family also exhibits low capacitance - 6pF max and a spot noise figure of -0.5dB max. The part offers a superior tracking ability. The hermetically sealed TO-71 and TO-78 packages are well suited for high reliability and harsh environment applications. (See Packaging Information). FEATURES LOW DRIFT LOW LEAKAGE LOW NOISE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) |∆ VGS1‐2 /∆T|= 5µV/°C max. IG = 20pA TYP. en = 10nV/√Hz TYP.
2N3955 Applications:
Wideband Differential Amps High Input Impedance Amplifiers
Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each
Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air – Total 400mW @ 25°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. 25 µV/°C VDG=20V, ID=200µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOL...