Ultra-High Input Impedance N-Channel JFET
2N4119A N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4119A
The 2N4119A is an Ultra-High Input Impeda...
Description
2N4119A N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4119A
The 2N4119A is an Ultra-High Input Impedance N-Channel JFET
The 2N4119A provides ultra-high input impedance. The device is specified with a 1-pA limit and typically operates at 0.2 pA. The part is ideal for use as a highimpedance sensitive front-end amplifier. FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N4119A LOW POWER MINIMUM CIRCUIT LOADING ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Gate Current (Note 1) MAXIMUM VOLTAGES Gate to Drain or Gate to Source (Note 2)
IDSS<90 µA IGSS<1 pA
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2N4119A Benefits:
Insignificant Signal Loss / Error Voltage with High-Impedance Source Low Power Consumption (Battery) Maximum Signal Output, Low Noise High Sensitivity to Low-Level Signals
‐65°C to +175°C ‐55°C to +150°C 300mW 50mA ‐40V
2N4119A Applications:
High-Impedance Transducer Smoke Detector Input Infrared Detector Amplifier Precision Test Equipment
2N4119A ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐40 ‐‐ ‐‐ V IG = ‐1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐2 ‐‐ ‐6 V VDS = 10V, ID = 1nA IDSS Gate to Source Saturation Current ...
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