N-Channel Mosfet
2N4351 N-CHANNEL MOSFET
The 2N4351 is an enhancement mode N-Channel Mosfet
The 2N4351 is an enhancement mode N-Channel ...
Description
2N4351 N-CHANNEL MOSFET
The 2N4351 is an enhancement mode N-Channel Mosfet
The 2N4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT HIGH GAIN ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) ID = 100mA gfS = 1000µS
Maximum Temperatures Storage Temperature Operating Junction Temperature 2N4351 Features: Maximum Power Dissipation Continuous Power Dissipation Low ON Resistance MAXIMUM CURRENT Low Capacitance Drain to Source (Note 1) High Gain MAXIMUM VOLTAGES High Gate Breakdown Voltage Drain to Body Low Threshold Voltage Drain to Source Peak Gate to Source (Note 2) 2N4351 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS BVDSS Drain to Source Breakdown Voltage 25 ‐‐ ‐‐ V VDS(on) Drain to Source “On” Voltage ‐‐ ‐‐ 1 VGS(th) Gate to Source Threshold Voltage 1 ‐‐ 5 IGSS Gate Leakage Current ‐‐ ‐‐ 10 pA IDSS Drain Leakage Current “Off” ‐‐ ‐‐ 10 nA ID(on) Drain Current “On” 3 ‐‐ ‐‐ mA gfs Forward Transconductance 1000 ‐‐ ‐‐ µS rDS(on) Drain to Source “On” Resistance ‐‐ ‐‐ 300 Ω
‐65°C to +200°C ‐55°C to +150°C 375mW 100mA 25V 25V ±125V CONDITIONS ID = 10µA, VGS = 0V ...
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