2N5115

2N5115 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5115 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N5115  LOW ON RESISTANCE  rDS(on) ≤ 100Ω  LOW CAPACITANCE  6pF  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  ‐55°C to +200°C  2N5115 Benefits: Operating Junction Temperature  ‐55°C to +200°C  ƒ Low On Resistance Maximum Power Dissipation  ƒ ID(off) ≤ 500 pA Continuous Power Dissipation   500mW  ƒ Switches directly from TTL logic MAXIMUM CURRENT 2N5115 Applications: Gate Current (Note 1)  IG = ‐50mA  ƒ Analog Switches MAXIMUM VOLTAGES  ƒ Commutators Gate to Drain Voltage  VGDS = 30V  ƒ Choppers Gate to Source Voltage  VGSS = 30V  2N5115 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  30  ‐‐  ‐‐    IG = 1µA,   VDS = 0V    VGS(off)  Gate to Source Cutoff Voltage  3  ‐‐  6  VDS = ‐15V, ID = ‐1nA  V  VGS(F)  Gate to Source Forward Voltage  ‐‐  ‐0.7  ‐1  IG = ‐1mA,   VDS = 0V      ‐‐  ‐1.0  ‐‐  VGS = 0V, ID = ‐15mA  VDS(on)  Drain to Source On Voltage  ‐‐  ‐0.7  ‐0.8  VGS = 0V, ID = ‐7mA  ‐‐  ‐0.5  ‐‐  VGS = 0V, ID = ‐3mA  IDSS  Drain to Source Saturation Curre...