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2N5116 Dataheets PDF



Part Number 2N5116
Manufacturers Micross
Logo Micross
Description P-CHANNEL JFET
Datasheet 2N5116 Datasheet2N5116 Datasheet (PDF)

2N5116 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5116 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N5116  LOW ON RESISTANCE  rDS(on) ≤ 150Ω  LOW CAPACITANCE  6pF  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temper.

  2N5116   2N5116


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2N5116 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5116 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N5116  LOW ON RESISTANCE  rDS(on) ≤ 150Ω  LOW CAPACITANCE  6pF  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  ‐55°C to +200°C  2N5116 Benefits: Operating Junction Temperature  ‐55°C to +200°C  ƒ Low On Resistance Maximum Power Dissipation  ƒ ID(off) ≤ 500 pA Continuous Power Dissipation   500mW  ƒ Switches directly from TTL logic MAXIMUM CURRENT 2N5116 Applications: Gate Current (Note 1)  IG = ‐50mA  ƒ Analog Switches MAXIMUM VOLTAGES  ƒ Commutators Gate to Drain Voltage  VGDS = 30V  ƒ Choppers Gate to Source Voltage  VGSS = 30V  2N5116 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  30  ‐‐  ‐‐    IG = 1µA,   VDS = 0V    VGS(off)  Gate to Source Cutoff Voltage  1  ‐‐  4  VDS = ‐15V, ID = ‐1nA  V  VGS(F)  Gate to Source Forward Voltage  ‐‐  ‐0.7  ‐1  IG = ‐1mA,   VDS = 0V      ‐‐  ‐1.0  ‐‐  VGS = 0V, ID = ‐15mA  VDS(on)  Drain to Source On Voltage  ‐‐  ‐0.7  ‐‐  VGS = 0V, ID = ‐7mA  ‐‐  ‐0.5  ‐0.6  VGS = 0V, ID = ‐3mA  IDSS  Drain to Source Saturation Current (Note 2)  ‐5  ‐‐  ‐25  mA  VDS = ‐15V, VGS = 0V  IGSS  Gate Reverse Current  ‐‐  5  500    VGS = 20V,  VDS = 0V    IG  Gate Operating Current  ‐‐  ‐5  ‐‐  VDS = ‐15V,  ID = ‐1mA  pA      ‐‐  ‐10  ‐‐  VDS = ‐15V, VGS = 12V    ID(off)  Drain Cutoff Current  ‐‐  ‐10  ‐‐  VDS = ‐15V, VGS = 7V  ‐‐  ‐10  ‐500  VDS = ‐15V, VGS = 5V  rDS(on)  Drain to Source On Resistance  ‐‐  ‐‐  150  Ω  ID = ‐1mA,   VGS = 0V  2N5116 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  CONDITIONS  gfs  Forward Transconductance  ‐‐  4.5  ‐‐  mS  VDS = ‐15V,  ID = 1mA , f = 1kHz  gos  Output Conductance  ‐‐  20  ‐‐  µS  rDS(on)  Drain to Source On Resistance  ‐‐  ‐‐  150  Ω  ID = 0A,   VGS = 0V,   f = 1kHz  Ciss  Input Capacitance  ‐‐  20  25    VDS = ‐15V, VGS = 0V, f = 1MHz  pF      ‐‐  5  ‐‐  VDS = 0V, VGS = 12V, f = 1MHz  Crss  Reverse Transfer Capacitance  ‐‐  6  ‐‐  VDS = 0V, VGS = 7V, f = 1MHz  ‐‐  6  7  VDS = 0V, VGS = 5V, f = 1MHz  en  Equivalent Noise Voltage  ‐‐  20  ‐‐  nV/√Hz  VDG = 10V,  ID = 10mA , f = 1kHz  2N5116 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC    UNITS  CONDITIONS  www.DataSheet4U.com Click To Buy Turn On Time  Turn On Rise Time  Turn Off Time  Turn Off Fall Time  12  30  10  50      ns  VGS(L) = ‐5V  VGS(H) = 0V    See Switching Circuit  ‐6V  8V  2kΩ  390Ω  ‐3mA            Available Packages: 2N5116 in TO-18 2N5116 in bare die. Please contact Micross for full package and die dimensions TO-18 (Bottom View) td(on)  tr  td(off)  tf  Note 1 ‐ Absolute maximum ratings are limiting values above which 2N5116 serviceability  may be impaired.  Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤                                                                                                                    3%  2N5116 SWITCHING CIRCUIT PARAMETERS                                                                                                                           VDD  VGG  RL  RG  ID(on)  SWITCHING TEST CIRCUIT Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. .


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