2N5301

2N5301 N-CHANNEL JFET Linear Systems replaces discontinued LF5301 and PF5301 The 2N5301 is a very High Input Impedance N-Channel JFET amplifier The 2N5301 N-channel JFET is designed to provide performance amplification at low frequencies and with low noise. The hermetically sealed TO-18 package is well suited 2N5301 Benefits: for military applications and harsh environment ƒ ƒ ƒ Insignificant Signal Loss/Error Voltage with High-Impedance Source Maximum Signal Output, Low Noise High Sensitivity to Low-Level Signals FEATURES  DIRECT REPLACEMENT FOR LF5301 & PF5301  HIGH INPUT IMPENDANCE  HIGH GAIN  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Gate Current (Note 1)  MAXIMUM VOLTAGES  Gate to Drain or Gate to Source      IG = 0.100 pA  gfs = 70 µS  ‐65°C to +175°C  ‐65°C to +150°C  300mW  50mA  ‐30V      www.DataSheet4U.com 2N5301 Applications: ƒ ƒ ƒ ƒ High-Impedance Transducer Smoke Detector Input Infrared Detector Amplifier Precision Test Equipment   2N5301 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  ‐30  ‐‐  ‐‐  V  VDS = 0V,   ID = ‐1µA  VGS(off)  Gate to Source Cutoff Voltage  0.6  ‐‐  3.0  V                    VDS = 10V,   ID = 1nA  IGSS  Gate Leakage Current  ‐‐  ‐‐  ‐1  pA  VDG = 0V,     VGS = ...