Amplifier
3N190 P-CHANNEL MOSFET
The 3N190 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES DIRECT REPLACEMENT FO...
Description
3N190 P-CHANNEL MOSFET
The 3N190 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 LOW GATE LEAKAGE CURRENT IGSS ≤ ± 10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF The hermetically sealed TO-78 package is well suited ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) for high reliability and harsh environment applications. Maximum Temperatures Storage Temperature ‐65°C to +150°C (See Packaging Information). Operating Junction Temperature ‐55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation (one side) 300mW 3N190 Features: Continuous Power Dissipation (one side) 525mW MAXIMUM CURRENT Very high Input Impedance Drain to Source2 50mA High Gate Breakdown Voltage MAXIMUM VOLTAGES Low Capacitance Drain to Gate or Drain to Source2 ‐30V Transient Gate to Source2,3 ±125V Gate‐Gate Voltage ±80V 3N190 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVDSS Drain to Source Breakdown Voltage ‐40 ‐‐ ‐‐ ID = ‐10µA BVSDS Source to Drain Breakdown Voltage ‐40 ‐‐ ‐‐ IS = ‐10µA, VBD = 0V V VGS Gate to Source Voltage ‐3.0 ‐‐ ‐6.5 VDS = ‐15V, ID = ‐500µA VGS(th) Gate to Source Threshold Voltage ‐2.0 ‐‐ ‐5.0 VDS = ‐15V, ID = ‐500µA ‐2.0 ‐‐ ‐5.0 VDS = VGS , ID = ‐10µA IGSSR Gate Reverse Leakage Current ‐‐ ‐‐ 10 VGS = 40V IGSSF Forward Gate Leakage Current ‐‐ ‐‐ ‐10 VGS = ‐40V...
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