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J310

Micross

Amplifier

J310 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J310 The J310 is a high frequency n-channel JFET off...


Micross

J310

File Download Download J310 Datasheet


Description
J310 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J310 The J310 is a high frequency n-channel JFET offering a wide range and low noise performance. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX J310  OUTSTANDING HIGH FREQUENCY GAIN   LOW HIGH FREQUENCY NOISE  ABSOLUTE MAXIMUM RATINGS @ 25°C1   Gpg = 11.5dB  NF = 2.7dB  Maximum Temperatures  Storage Temperature  ‐55°C to +150°C  ƒ High Power Low Noise gain Operating Junction Temperature  ‐55°C to +135°C  ƒ Dynamic Range greater than 100dB Maximum Power Dissipation  ƒ Easily matched to 75Ω input Continuous Power Dissipation   350mW  J310 Applications: MAXIMUM CURRENT Gate Current  10mA  ƒ UHV / VHF Amplifiers MAXIMUM VOLTAGES  ƒ Mixers Gate to Drain Voltage or  Gate to Source Voltage   ‐25V  ƒ Oscillators         J310 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNIT  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  ‐25  ‐‐  ‐‐  V  VDS = 0V, IG = ‐1µA  VGS(F)  Gate to Source Forward Voltage  0.7  ‐‐  1  VDS = 0V, IG = 10mA  VGS(off)  Gate to Source Cutoff Voltage  ‐2  ‐‐  ‐6.5  VDS = 10V,  ID = 1nA  IDSS  Drain to Source Saturation Current2  24  ‐‐  60  mA  VDS = 10V, VGS = 0V  IG  Gate Operating Current (Note 3)  ‐‐  ‐15  ‐‐  pA  VDG = 9V,  ID = 10mA  rDS(on)  Drain to Source On Resistance  ‐‐  35  ‐‐  Ω  VGS = 0V,  ID = 1mA                J...




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