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LS131

Micross

General Purpose

LS131 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems replaces discontinued Intersil IT131 The LS131 is a monolithic pair...


Micross

LS131

File Download Download LS131 Datasheet


Description
LS131 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems replaces discontinued Intersil IT131 The LS131 is a monolithic pair of PNP transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The LS131 is a direct replacement for discontinued Intersil IT131. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). LS131 Features: ƒ High hfe at low current ƒ Tight matching Tight VBE tracking ƒ ƒ Low Output Capacitance FEATURES  Direct Replacement for INTERSIL IT131  HIGH  hFE @ LOW CURRENT  OUTPUT CAPACITANCE  VBE tracking ABSOLUTE MAXIMUM RATINGS 1  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation (One side)  Continuous Power Dissipation (Both sides)  Linear Derating factor (One side)  Linear Derating factor (Both sides)  Maximum Currents  Collector Current    MIN  ‐‐  ‐‐  ‐‐  TYP  ‐‐  ‐‐  ‐‐  MAX  3  10  25  UNITS  mV  µV/°C  nA  ≥ 80 @ 10µA  ≤ 2.0pF  ≤ 10µV°C  ‐65°C to +200°C  ‐55°C to +150°C  250mW  500mW  2.3mW/°C  4.3mW/°C  10mA    CONDITIONS  IC = 10µA, VCE = 5V  IC = 10µA, VCE = 5V  TA = ‐55°C to +125°C  IC = 10µA, VCE = 5V  www.DataSheet4U.com MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  SYMBOL  CHARACTERISTIC  |VBE1 – VBE2 |  Base Emitter Voltage Differentia...




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