LS311 MONOLITHIC DUAL NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
The LS311 is a monolith...
LS311 MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual
NPN
The LS311 is a monolithic pair of
NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). LS311 Features:
FEATURES HIGH GAIN TIGHT VBE MATCHING HIGH ft ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current MIN ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ TYP 0.4 1 ‐‐ ‐‐ 5 MAX 1 5 10 0.5 ‐‐
hFE ≥ 150 @ 10µA‐1mA |VBE1 – VBE2 |= 0.2mV TYP. 250MHz TYP. @ 1mA
‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 10mA UNITS mV µV/°C nA nA/°C % CONDITIONS IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V
www.DataSheet4U.com
Very high gain Tight matching Low Output Capacitance
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VB...