LS350

LS350 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS350 is a monolithic pair of PNP transistors mounted in a single SOIC package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The 8 Pin SOIC provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). LS350 Features: ƒ ƒ FEATURES  HIGH  GAIN   TIGHT VBE MATCHING  HIGH ft  ABSOLUTE MAXIMUM RATINGS 1  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation (One side)  Continuous Power Dissipation (Both sides)  Linear Derating factor (One side)  Linear Derating factor (Both sides)  Maximum Currents  Collector Current    MIN  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  TYP  1  2  ‐‐  ‐‐  MAX  5  20  ‐‐  ‐‐  hFE ≥ 100 @ 10µA‐1mA  |VBE1 – VBE2 |= 0.1mV TYP.  275MHz TYP. @ 1mA  ‐65°C to +200°C  ‐55°C to +150°C  250mW  500mW  2.3mW/°C  4.3mW/°C  10mA    UNITS  mV  µV/°C  nA  nA/°C  %  CONDITIONS  IC = 10µA, VCE = 5V  IC = 10µA, VCE = 5V  TA = ‐55°C to +125°C  IC = 10µA, VCE = 5V  IC = 10µA, VCE = 5V  TA = ‐55°C to +125°C  IC = 10µA, VCE = 5V  www.DataSheet4U.com ƒ Very high gain Tight matching Low Output Capacitance MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  SYMBOL  CHARACTERISTIC  |VBE1 – VBE2 |  Base Emitter Voltage Differential  ∆|(VBE1 – VBE2)| / ∆T  Base E...