LS3955

LS3955 MONOLITHIC DUAL N-CHANNEL JFET The LS3955 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The LS3955 family are matched JFET pairs for differential amplifiers. The LS3955 family of general purpose JFETs is characterized for low and medium frequency differential amplifiers requiring low offset voltage, drift, noise and capacitance The LS3955 family exhibits low capacitance - 6pF max and a spot noise figure of - 0.5dB max. The part offers a superior tracking ability. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES  LOW DRIFT  LOW LEAKAGE  LOW NOISE  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  |∆ VGS1‐2 /∆T|= 5µV/°C max. IG = 20pA TYP.  en = 10nV/√Hz TYP.  LS3955 Applications: ƒ ƒ Wideband Differential Amps High Input Impedance Amplifiers Maximum Temperatures  Storage Temperature  ‐65°C to +200°C  Operating Junction Temperature  +150°C  Maximum Voltage and Current for Each Transistor – Note 1  ‐VGSS  Gate Voltage to Drain or Source  60V  ‐VDSO  Drain to Source Voltage  60V  ‐IG(f)  Gate Forward Current  50mA  Maximum Power Dissipation  Device Dissipation @ Free Air – Total                 400mW @ 25°C    MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL  CHARACTERISTICS  VALUE  UNITS  CONDITIONS  | V GS1‐2 / T| max.  DRIFT VS.  25  µV/°C  VDG=20V, ID=200µA  TEMPERATURE  TA=‐55°C to +125°C  | V GS1‐2 | max.  OFFSET VOLTAGE  ...