Amplifier
LS3N166 P-CHANNEL MOSFET
The LS3N166 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES DIRECT REPLACEMEN...
Description
LS3N166 P-CHANNEL MOSFET
The LS3N166 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES DIRECT REPLACEMENT FOR INTERSIL LS3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well suited Storage Temperature ‐65°C to +200°C for high reliability and harsh environment applications. Operating Junction Temperature ‐55°C to +150°C Lead Temperature (Soldering, 10 sec.) +300°C (See Packaging Information). Maximum Power Dissipation Continuous Power Dissipation (one side) 300mW LS3N166 Features: Total Derating above 25°C 4.2 mW/°C MAXIMUM CURRENT Very high Input Impedance Drain Current 50mA Low Capacitance MAXIMUM VOLTAGES High Gain High Gate Breakdown Voltage Drain to Gate or Drain to Source2 ‐30V Low Threshold Voltage Peak Gate to Source3 ±125V Gate‐Gate Voltage ±80V LS3N166 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS IGSSR Gate Reverse Leakage Current ‐‐ ‐‐ 10 VGS = ‐0V IGSSF Gate Forward Current ‐‐ ‐‐ ‐10 VGS = ‐40V pA TA= +125°C ‐‐ ‐‐ ‐25 IDSS Drain to Source Leakage Current ‐‐ ‐‐ ‐200 VDS = ‐20V ISDS Source to Drain Leakage Current ‐‐ ‐‐ ‐400 VSD = ‐20V VDB = 0 ID(on) Drain Current “On” ‐5.0 ‐‐ ‐30 mA VDS = ‐15V, VGS = ‐10V VGS(th) Gate to Source Threshold Voltage ‐2.0 ‐‐ ‐5.0 V VDS = ‐15V, ID = ‐10µA ‐2.0 ‐‐ ‐5.0 VDS = VGS , ID = ‐...
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