High Impedence
LS4119 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4119
The LS4119 is an Ultra-High Input Impedance...
Description
LS4119 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4119
The LS4119 is an Ultra-High Input Impedance N-Channel JFET
The LS4119 provides ultra-high input impedance. The device is specified with a 10-pA limit and is ideal for use as a high-impedance sensitive front-end amplifier. FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N4119 LOW POWER MINIMUM CIRCUIT LOADING ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Gate Current (Note 1) MAXIMUM VOLTAGES Gate to Drain or Gate to Source (Note 2)
IDSS<90 µA IGSS<10 pA
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LS4119 Benefits:
Insignificant Signal Loss/Error Voltage with High-Impedance Source Low Power Consumption (Battery) Maximum Signal Output, Low Noise High Sensitivity to Low-Level Signals
‐65°C to +175°C ‐55°C to +150°C 300mW 50mA ‐40V
LS4119 Applications:
High-Impedance Transducer Smoke Detector Input Infrared Detector Amplifier Precision Test Equipment
LS4119 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐40 ‐‐ ‐‐ V IG = ‐1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐2 ‐‐ ‐6 V VDS = 10V, ID = 1nA IDSS Gate to Source Saturation Current 0.20 ‐‐ 0.60 mA VDS = 10V, VGS = 0V IG...
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