High Gain
LS5911 MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix & National 2N5911
The LS5911 are m...
Description
LS5911 MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix & National 2N5911
The LS5911 are monolithic dual JFETs. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The LS5911 is a direct replacement for discontinued Siliconix and National 2N5911. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation.
(See Packaging Information).
FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5911 LOW NOISE (10KHz) en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source MIN ‐‐ ‐‐ 0.95 ‐‐ TYP ‐‐ ‐‐ ‐‐ MAX 10 20 1 UNITS mV µV/°C % ‐65°C to +150°C ‐55°C to +135°C
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500mW 50mA ‐25V ‐25V CONDITIONS VDG = 10V, ID = 5mA VDG = 10V, ID = 5mA TA = ‐55°C to +125°C VDS = 10V, VGS = 0V
LS5911 Applications: Wideband Differential Amps High-Speed,Temp-Compensated SingleEnded Input Amps High-Speed Comparators Impedance Converter...
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