Amplifier
LSJ210 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J210
The LSJ210 is a n-channel JFET General Purpos...
Description
LSJ210 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J210
The LSJ210 is a n-channel JFET General Purpose amplifier with low noise and low leakage. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR SILICONIX J210 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures Storage Temperature ‐55°C to +150°C High gain Operating Junction Temperature ‐55°C to +135°C Low Leakage Maximum Power Dissipation Low Noise Continuous Power Dissipation 360mW LSJ210 Applications: Derating over temperature 3.27 mW/°C General Purpose Amplifiers MAXIMUM CURRENT UHV / VHF Amplifiers Gate Current (Note 1) 10mA Mixers MAXIMUM VOLTAGES Oscillators Gate to Drain Voltage or Gate to Source Voltage ‐25V LSJ210 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V VDS = 0V, IG = ‐1µA VGS(off) Gate to Source Cutoff Voltage ‐1 ‐‐ ‐3 VDS = 15V, ID = 1nA IDSS Drain to Source Saturation Current (Note 2) 2 ‐‐ 15 mA VDS = 15V, VGS = 0V IGSS Gate Reverse Current (Note 3) ‐‐ ‐‐ ‐100 pA VDS = 0V, VGS = ‐15V IG Gate Operating Current (Note 3) ‐‐ ‐10 ‐‐ pA VDS = 10V, ID = 1mA rDS(on) Drain t...
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