SST202

SST202 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST202 The SST202 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX SST202  LOW CUT OFF VOLTAGE  VGS(off) ≤ 1.5  HIGH GAIN  AV = 80 V/V  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Forward Gate Current (Note 1)  MAXIMUM VOLTAGES  Gate to Drain Voltage  Gate to Source Voltage    ‐65°C to +150°C  ‐55°C to +135°C  350mW  50mA  VGDS = ‐40V  VGSS = ‐40V    SST202 Benefits: ƒ ƒ ƒ ƒ ƒ ƒ High Input Impedance Low Cutoff Voltage Low Noise Battery powered amplifiers Audio Pre-Amplifiers Infra-Red Detector Amplifiers SST202 Applications:     SST202 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  BVGSS  Gate to Source Breakdown Voltage  ‐40  VGS(off)  Gate to Source Cutoff Voltage  ‐0.8  IDSS  Drain to Source Saturation Current (Note 2)  0.9  IGSS  Gate Reverse Current  ‐2  IG  Gate Operating Current  ‐‐  ID(off)  Drain Cutoff Current  ‐‐  gfs  Forward Transconductance  1  Ciss  Input Capacitance  ‐‐  Crss  Reverse Transfer Capacitance  ‐‐  en  Equiva...