Amplifier
SST309 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix SST309
The SST309 is a high frequency n-channel JF...
Description
SST309 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix SST309
The SST309 is a high frequency n-channel JFET offering a wide range and low noise performance. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR SILICONIX SST309 OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE ABSOLUTE MAXIMUM RATINGS @ 25°C1 Gpg = 11.5dB NF = 2.7dB
Maximum Temperatures Storage Temperature ‐55°C to +150°C High Power Low Noise gain Operating Junction Temperature ‐55°C to +135°C Dynamic Range greater than 100dB Maximum Power Dissipation Easily matched to 75Ω input Continuous Power Dissipation 350mW SST309 Applications: MAXIMUM CURRENT Gate Current 10mA UHV / VHF Amplifiers MAXIMUM VOLTAGES Mixers Gate to Drain Voltage or Gate to Source Voltage ‐25V Oscillators SST309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNIT CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V VDS = 0V, IG = ‐1µA VGS(F) Gate to Source Forward Voltage 0.7 ‐‐ 1 VDS = 0V, IG = 10mA VGS(off) Gate to Source Cutoff Voltage ‐1 ‐‐ ‐4 VDS = 10V, ID = 1nA IDSS Drain to Source Saturation Current2 12 ‐‐ 30 mA VDS = 10V, VGS = 0V IG Gate Operating Current (Note 3) ‐‐ ‐15 ‐‐ pA VDG = 9V, ID = 10mA rDS(on) Drain to Source On Resistance ‐‐ 35 ‐‐ Ω VGS = 0V, ID = 1mA ...
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