High Impedence
SST4117 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix SST4117
The SST4117 is an Ultra-High Input Impeda...
Description
SST4117 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix SST4117
The SST4117 is an Ultra-High Input Impedance N-Channel JFET
The SST4117 provides ultra-high input impedance. The device is specified with a 10-pA limit and is ideal for use as a high-impedance sensitive front-end amplifier. FEATURES DIRECT REPLACEMENT FOR SILICONIX SST4117 LOW POWER MINIMUM CIRCUIT LOADING ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Gate Current (Note 1) MAXIMUM VOLTAGES Gate to Drain or Gate to Source (Note 2)
IDSS<90 µA IGSS<10 pA
SST4117 Benefits:
Insignificant Signal Loss/Error Voltage with High-Impedance Source Low Power Consumption (Battery) Maximum Signal Output, Low Noise High Sensitivity to Low-Level Signals
‐65°C to +175°C ‐55°C to +150°C 300mW 50mA ‐40V
SST4117 Applications:
High-Impedance Transducer Smoke Detector Input Infrared Detector Amplifier Precision Test Equipment
SST4117 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐40 ‐‐ ‐‐ V IG = ‐1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐0.6 ‐‐ ‐1.8 V VDS = 10V, ID = 1nA IDSS Gate to Source Saturation Current 0.03 ‐‐ 0.09 mA VDS = 10V, VGS = 0V IGSS Gate ...
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