isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1880
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: V...
isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2SA1880
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -80(V)(Min.) ·Low Collector Saturation Voltage
:VCE(sat)= -0.3(V)(Max.)@IC= -5A ·Large Current Capability-IC= -10A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as a driver in DC/DC converters and
actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
-1.5
A
IBM
Base Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-2
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
5
℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2SA1880
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -0.1A; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
ICEO
Collector Cutoff Current
VCE= -80V; IB= 0
IEBO
Emitter...