2SA1942

isc Silicon PNP Power Transistor 2SA1942 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Complement to Type 2SC5199 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.2 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1942 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A; IB= -0.8A VBE(on) Base-Emitter On Voltage IC= -6A; VCE= -5V ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -6A; VCE= -5V COB Output Capacitance IE=0; VCB= -10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V MIN TYP. MAX UNIT -160 V -2.5 V -1.5 V -5 μA -5 μA 5...