2SA1869

isc Silicon PNP Power Transistor 2SA1869 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4935 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.3 A 10 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1869 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -2V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -2V hFE-2 DC Current Gain IC= -2.5A; VCE= -2V COB Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -2V MIN TYP. MAX UNIT -50 V -0.6 V -1.0 V -1.0 μA -1.0 μA 70 240 30 35 pF 100 MHz  hFE-1 Classifications ...