2SA1788

isc Silicon PNP Power Transistor 2SA1788 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc&iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -0.6A ICBO Collector Cutoff Current VCB= -120V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -1A ; VCE= -5V  hFE Classifications D E F 60-120 100-200 160-320 2SA1788 MIN TYP. MAX UNIT -120 V -2.0 V -2.5 V -10 μA -10 μA 60 320 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the app...