isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·Low Collector...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max)@ IC= -6A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-14
V
IC
Collector Current-Continuous
-12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-1.2
A
30
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SA1771
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= -6A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -14V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -1V
hFE-2
DC Current Gain
IC= -6A; VCE= -1V
2SA1771
MIN TYP. MAX UNIT
-80
V
-0.4 V
-1.2 V
-10 μA
-10 μA
100
320
40
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