2SA1746

isc Silicon PNP Power Transistor 2SA1746 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -80mA VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -80mA ICBO Collector Cutoff Current VCB= -70V ; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -5A ; VCE= -1V 2SA1746 MIN TYP. MAX UNIT -50 V -0.5 V -1.2 V -10 μA -10 μA 50 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is prese...