isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -0.5(V)(Max)@IC= -2A ·High Sw...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -0.5(V)(Max)@IC= -2A ·High Switching Speed ·Complement to Type 2SC4512 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-6
A
IB
Base Collector Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SA1726
isc website: www.iscsemi.com
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
ICBO
Collector Cutoff Current
VCB= -80V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -2A ; VCE= -4V
hFE Classifications
O
P
Y
50-100 70-140 90-180
2SA1726
MIN TYP. MAX UNIT
-80
V
-0.5
V
-10 μA
-10 μA
50
180
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicatio...