2SA1725

isc Silicon PNP Power Transistor 2SA1725 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -2A ·High Switching Speed ·Complement to Type 2SC4511 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Collector Current-Continuous -3 A PC Total Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1725 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -2A ; VCE= -4V fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= -3A ,RL= 10Ω, IB1= -IB2= -0.3A,VCC= -30V MIN TYP. MAX UNIT -80 V -0.5 V -10 μA -10 μA 50 180 20 MHz 150 pF 0.1...