2SA1659A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION ·With TO-220F package ·Complement to type 2SC4370/4370A ·High transition frequency fT APPLICATIONS ·High voltage applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SA1659 VCBO Collector-base voltage 2SA1659A 2SA1659 VCEO Collector-emitter voltage 2SA1659A VEBO IC IB B CONDITIONS VALUE -160 UNIT Open emitter -180 -160 Open base -180 Open collector -5 -1.5 -0.15 TC=25℃ 20 150 -55~150 V V Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature V A A W ℃ ℃ PC Tj Tstg www.DataSheet4U.com Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA1659 V(BR)CEO Collector-emitter breakdown voltage 2SA1659A VCEsat VBE ICBO IEBO hFE fT COB Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance IC=-0.5A;IB=-50mA IC=-0.5A ; VCE=-5V VCB=-160V;IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-5V IC=-0.1A ; VCE=-10V IE=0 ; VCB=-10V;f=1MHz IC=10mA ; IB=0 B 2SA1659 2SA1659A CONDITIONS MIN -160 TYP. MAX UNIT V -180 -1.5 -1.0 -1 -1 70 100 30 240 MHz pF V V μA μA ‹ hFE classifications O 70-140 Y 120-240 2 Inchange Se...