2SA1640

isc Silicon PNP Power Transistor 2SA1640 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ (IC= -3A, IB= -0.1A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, driver and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.1A ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -0.2A; VCE= -2V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 2SA1640 MIN TYP. MAX UNIT -30 V -5 V -30 V ...