2SA1513

isc Silicon PNP Power Transistor 2SA1513 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Currrent Capacity ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -12A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ 60 W 3.5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1513 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -12A; IB= -0.6A -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -12A; IB= -0.6A -1.5 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -3A; VCE= -2V 100 400 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 300 pF ...