isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -200V(Min) ·Good Linearity...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3857 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-5
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SA1493
isc website: www.iscsemi.com
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
ICBO
Collector Cutoff Current
VCB= -200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -5A; VCE= -4V
hFE Classifications
O
P
Y
50-100 70-140 90-180
2SA1493
MIN TYP. MAX UNIT
-200
V
-3.0 V
-100 μA
-100 μA
50
180
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our pro...