2SA1470

isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 70(Min)@ (VCE= -2V, IC= -1A) ·Low Saturation Voltage- : VCE(sat)= -0.4V(Max)@ (IC= -3.5A, IB= -0.175A) ·Fast Switching Time ·Complement to Type 2SC3747 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters, converters (strobo, flash, fluorescent lamp lighting circuit). ·Power amp(high power car stereo, motor controller). ·High-speed switching (switching regulator, driver). ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -10 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1470 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3.5A; IB= -0.175A ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cu...