2SA1388

isc Silicon PNP Power Transistor 2SA1388 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -3A ·High Switching Speed ·Complement to Type 2SC3540 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Pulse Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -8 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -150mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -150mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -1V hFE-2 DC Current Gain IC= -3A; VCE= -1V  hFE-1 Classifications O Y 70-140 120-240 2SA1388 MIN TYP. MAX UNIT -80 V -0.4 V -1.2 V -1 μA -1 μA 70 240 30 NOTICE： ISC reserves the rights to make changes of the content ...