2SA1249

isc Silicon PNP Power Transistor 2SA1249 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC3117 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV sound output, converters, inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2.5 A 1 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -0.1A; VCE= -5V hFE-2 DC Current Gain IC= -10mA; VCE= -5V  hFE-1 Classifications R S T 100-200 140-280 200-400 2SA1...