isc Silicon PNP Power Transistor
2SA1227A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·Go...
isc Silicon
PNP Power
Transistor
2SA1227A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2987A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-20
A
120
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
PNP Power
Transistor
2SA1227A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
-1.5
V
VBE(sat) Base -Emitter Saturation Voltage
IC= -5.0A; IB= -0.5A
-2.0
V
ICBO
Collector Cutoff Current
VCB= -140V; IE= 0
-50 μA
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
-50 μA
hFE-1
DC Current Gain
IC= -2A; VCE= -5V
60
320
hFE-2
DC Current Gain
IC= -5A; VCE= -5V
40
COB
Output Capacitance
IE= 0; VCB= -10V;ftest= 1.0MHz
280
pF
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
60
MHz
hFE-1 Classifications
R
Q
P
60-120 100-200 160-320
NOTICE: ISC ...