2SA1227

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2987 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -20 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1227 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1227 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A ICBO Collector Cutoff Current VCB= -140V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -2A; VCE= -5V hFE-2 DC Current Gain IC= -5A; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V MIN TYP. MAX UNIT -1.5 V -2.0 V -50 μA -50 μA 60 320 40 280 pF 60 MHz  hFE-1 Classifications R Q P 60-120 100-200 160-320 NOTICE： ISC reserves the...