2SA1205

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1205 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.12A ICBO Collector Cutoff Current VCB= -70V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -5A; VCE= -0.5V fT Current-Gain—Bandwidth Product IE= 3A ; VCE= -12V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= -5A; RL= 4Ω, IB1= -IB2= -0.12A; VCC= -20V 2SA1205 MIN TYP. MAX UNIT -50 V -0.5 V -100 μA -100 μA 40 20 MHz 0.6 μs 0.5 μs 0.25 μs NOTICE： ISC reserves the rights to make c...