2SA1195

isc Silicon PNP Power Transistor 2SA1195 DESCRIPTION ·Low Collector Saturation Voltage ·High voltage ·Complement to Type 2SC2483 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE -160 -160 -6 -1.5 2 UNIT V V V A w 10 W 175 ℃ -55~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Collector-Emitter Saturation Voltage IC= -50mA;VCE=-5V ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE-1 DC Current Gain IC= -0.5A ; VCE= -5V hFE-2 DC Current Gain IC= -0.1A ; VCE= -5V fT Current-Gain—Bandwidth Product IC= -200mA; VCE= -5V  hFE-2 Classifications R O 60-120 100-200 2SA1195 MIN TYP. MAX UNIT -1.0 V -0.7 V -1 μA -1 μA 40 60 200 50 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contain...