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2SA1170 Datasheet, Equivalent, POWER TRANSISTOR.

POWER TRANSISTOR

POWER TRANSISTOR

 

 

 

Part 2SA1170
Description POWER TRANSISTOR
Feature isc Silicon PNP Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- V(BR)CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2SC27 74 APPLICATIONS ·Designed for power a mplifier and general purpose applicatio ns.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEB O Emitter-Base Voltage -6 V IC Col lector Current-Continuous PC Collecto r Power Dissipation @ TC=25℃ TJ Jun ction Temperature -17 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1170 isc .
Manufacture Inchange Semiconductor
Datasheet
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Part 2SA1170
Description POWER TRANSISTOR
Feature isc Silicon PNP Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- V(BR)CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2SC27 74 APPLICATIONS ·Designed for power a mplifier and general purpose applicatio ns.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEB O Emitter-Base Voltage -6 V IC Col lector Current-Continuous PC Collecto r Power Dissipation @ TC=25℃ TJ Jun ction Temperature -17 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1170 isc .
Manufacture Inchange Semiconductor
Datasheet
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2SA1170

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2SA1170

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