2SA1146

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=- 140V(Min) ·Complement to Type 2SC2706 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency low power amplifier applications ·Recommend for 70W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1146 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1146 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -140 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -5V -2.5 V ICBO Collector Cutoff Current VCB= -140V ; IE=0 -50 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -50 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 55 240 hFE-2 DC Current Gain IC= -5A ; VCE= -5V 30 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 220 pF fT Current-Gain—Bandwidth Product ...