2SA1142

isc Silicon PNP Power Transistor 2SA1142 DESCRIPTION ·Low Collector Saturation Voltage ·High voltage,fT ·Complement to Type 2SC2682 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -100 mA 1.2 w 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA VBE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA ICBO Collector Cutoff Current VCB= -180V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -1mA ; VCE= -5V hFE-2 DC Current Gain IC= -10mA ; VCE= -5V fT Current-Gain—Bandwidth Product IC= -20mA; VCE= -10V  hFE-2 Classifications O P 100-200 160-320 2SA1142 MIN TYP. MAX UNIT -0.5 V -1.5 V -1 μA -1 μA 90 100 320 180 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The i...