2SA1135

isc Silicon PNP Power Transistor 2SA1135 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2665 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 55 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -4V fT Current-Gain—Bandwidth Product IE= 0.2A; VCE= -10V Switching Times tr Rise Time tstg Storage Time tf Fall Time IC= -2A, RL= 3Ω, IB1= -IB2= -0.3A, VCC= -6V 2SA1135 MIN TYP. MAX UNIT -80 V -1.0 V -1.0 mA -1.0 mA 40 10 MHz 1.0 μs 0.4 μs 0.15 μs NOTICE： ISC reserves the rights to make changes of the content herein th...