2SA1133

isc Silicon PNP Power Transistor 2SA1133 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V (Min) ·Large Collector Power Dissipation ·Complement to Type 2SC2660 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A PC Collector Power Dissipation 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -500μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -500μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -400mA; VCE= -10V ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -150mA; VCE= -10V hFE-2 DC Current Gain IC= -400mA; VCE= -10V  hFE-1 Classifications Q P 60-140 100-240 2SA1133 MIN TYP. MAX U...