2SA1106

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Complement to Type 2SC2581 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -140V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -3A; VCE= -4V fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= -12V Switching Times tr Rise Time tstg Storage Time tf Fall Time IC= -5A, RL= 12Ω, IB1= -IB2= -0.5A, VCC= -60V MIN TYP. MAX UNIT -140 V -2.0 V -100 μA -100 μA 30 20 MHz 0.3 μs ...