2SA1096

isc Silicon PNP Power Transistor 2SA1096 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1096 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -2mA; IB= 0 -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -70 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.5 V ICBO Collector Cutoff Current VCB= -20V; IE= 0 -1 μA ICEO Collector Cutoff Current VCE= -10V; IB= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE DC Current Gain IC= -1A ; VCE= -5V 80 220 fT Current-Gain—Bandwidth Pr...