2SA1079

isc Silicon PNP Power Transistor 2SA1079 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2529 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers and drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -2 A 25 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1079 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -160 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1μA; IE= 0 -160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.7A; IB= -0.07A -1.0 V VBE(on) Base-Emitter On Voltage IC= -0.7A; VCE= -5V -1.7 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -1 μA ICEO Collector Cutoff Current VCE= -160V; IB= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1 μA hFE-1 DC Current Gain IC= -0.3A; VCE= -5...