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2SA1078 Dataheets PDF



Part Number 2SA1078
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description POWER TRANSISTOR
Datasheet 2SA1078 Datasheet2SA1078 Datasheet (PDF)

isc Silicon PNP Power Transistor 2SA1078 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2528 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers and drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage .

  2SA1078   2SA1078


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isc Silicon PNP Power Transistor 2SA1078 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2528 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers and drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -2 A 25 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1078 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -120 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1μA; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.7A; IB= -0.07A -1.0 V VBE(on) Base-Emitter On Voltage IC= -0.7A; VCE= -5V -1.7 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -1 μA ICEO Collector Cutoff Current VCE= -120V; IB= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1 μA hFE-1 DC Current Gain IC= -0.3A; VCE= -5V 60 350 hFE-2 DC Current Gain IC= -0.7A; VCE= -5V 50 COB Outut Capacitance IE= 0; VCB= -10V; f= 1.0MHz 100 pF fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V; f=10MHz 140 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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