isc Silicon PNP Power Transistor
2SA1075
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -160V(Min) ·...
isc Silicon
PNP Power
Transistor
2SA1075
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2525 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·switching
regulators ·DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-12
A
120
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
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isc Silicon
PNP Power
Transistor
2SA1075
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter –Base Breakdown Voltage IC=- 50uA ; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC=- 1mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC=- 50uA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
VCB= -120V; IE= 0 VCE= -120V; REB=∞
IEBO
Emitter Cutoff Current
VEB= -7V; IC=0
hFE-1
DC Current Gain
IC=-1A; VCE= -5V
hFE-2
DC Current Gain
IC= - 7A; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V;ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IE= -1A; VCE= ...